JPH0566737B2 - - Google Patents

Info

Publication number
JPH0566737B2
JPH0566737B2 JP59267177A JP26717784A JPH0566737B2 JP H0566737 B2 JPH0566737 B2 JP H0566737B2 JP 59267177 A JP59267177 A JP 59267177A JP 26717784 A JP26717784 A JP 26717784A JP H0566737 B2 JPH0566737 B2 JP H0566737B2
Authority
JP
Japan
Prior art keywords
chip
region
equivalent
layer
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59267177A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61144846A (ja
Inventor
Tomotaka Saito
Nobutaka Kitagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59267177A priority Critical patent/JPS61144846A/ja
Publication of JPS61144846A publication Critical patent/JPS61144846A/ja
Publication of JPH0566737B2 publication Critical patent/JPH0566737B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP59267177A 1984-12-18 1984-12-18 大規模集積回路装置 Granted JPS61144846A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59267177A JPS61144846A (ja) 1984-12-18 1984-12-18 大規模集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59267177A JPS61144846A (ja) 1984-12-18 1984-12-18 大規模集積回路装置

Publications (2)

Publication Number Publication Date
JPS61144846A JPS61144846A (ja) 1986-07-02
JPH0566737B2 true JPH0566737B2 (en]) 1993-09-22

Family

ID=17441173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59267177A Granted JPS61144846A (ja) 1984-12-18 1984-12-18 大規模集積回路装置

Country Status (1)

Country Link
JP (1) JPS61144846A (en])

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01204461A (ja) * 1988-02-09 1989-08-17 Matsushita Electron Corp 半導体集積回路
KR0131373B1 (ko) * 1994-06-15 1998-04-15 김주용 반도체 소자의 데이터 출력버퍼
JPH08330431A (ja) * 1995-05-31 1996-12-13 Nec Corp 半導体集積回路

Also Published As

Publication number Publication date
JPS61144846A (ja) 1986-07-02

Similar Documents

Publication Publication Date Title
JP3523762B2 (ja) 半導体記憶装置
US6222213B1 (en) Semiconductor integrated circuit device
KR920003676B1 (ko) 반도체 장치
JP3926011B2 (ja) 半導体装置の設計方法
US20020153591A1 (en) Semiconductor memory device
JP3074003B2 (ja) 半導体集積回路装置
JP3163039B2 (ja) 静電気保護回路を備えた半導体装置
JP3115787B2 (ja) ポリセル集積回路
US5892261A (en) SRAM bitline pull-up MOSFET structure for internal circuit electro-static discharge immunity
US5001487A (en) Semiconductor integrated circuit device
JPH0566737B2 (en])
KR19980063892A (ko) 셀 베이스 반도체 장치 및 스탠다드 셀
JP2780896B2 (ja) 半導体集積回路の製造方法
EP0113828B1 (en) Master slice semiconductor chip having a new multi-function fet cell
JP2002170930A (ja) 半導体装置、その製造方法および記憶媒体
JPS6074647A (ja) 半導体集積回路装置
JP3010911B2 (ja) 半導体装置
JPS5856354A (ja) マスタ−スライスｌｓｉ
JP2001168209A (ja) Ｃｍｏｓ集積回路及びその自動設計法
JP2596406B2 (ja) 半導体集積回路
JPH08186176A (ja) 半導体集積回路装置
JPS632152B2 (en])
KR20240157541A (ko) 전력 전달, 파워 메시 및 신호 전달을 위한 언더그라운드 인터커넥트(ugi)를 구비한 반도체 회로 구조
JP2834186B2 (ja) 半導体装置
JPH0824177B2 (ja) 半導体装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term